prel iminary bruckewell technology corp., ltd. surface mount high density 1 amp silicon schottky bridge rectifier mb1 2 0s features ?low forward voltage (0.76v typ @ 1.0a) ?low leakage current (0.2 a typ @ 200v) ?high current rating: 1.0a ?high voltage rating: 200v applications: ?input rectification for led lighting ?power over ethernet (poe) peripherals ?general purpose full wave rectification mechanical data case: mbs epoxy: ul94v - o rate flame retardant lead: l ead formed for surface mount maximum ratings (tc=25? unless otherwise noted) p arameter symbol MB120S unit maximum repetitive peak reverse voltage vrrm 200 v working peak reverse voltage vrwm 140 v maximum dc blocking voltage vdc 200 v maximum average forward rectified current total device if(av) 1 a peak forward surge curre nt 8.3ms single half sine - wave superimposed on rated load (jedec method) ifsm 30 a operating junction temperature range tj - 55 to +150 ? storage temperature range tstg - 55 to +150 ? electrical characteristics (tc=25? unless otherwise noted) parameter symbol typ max unit maxim un instantaneous at if=1a, tj=25? vf 0.75 0.90 v maximum reverse current tj=25? 0.2 50 u'a at working peak reverse voltage tj=125? ir - 20 m'a thermal characteristics (tc=25? unless otherwise noted) parameter symbol unit rja 85 typical thermal resistance rthjl 28 ?/w (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms
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